The first systems based on the Core M processor were to become available in Q4 2014 - according to the press release. In August 2014, Intel announced details of the 14 nm microarchitecture for its upcoming Core M processors, the first product to be manufactured on Intel's 14 nm manufacturing process. In September 2013, Intel demonstrated an Ultrabook laptop that used a 14 nm Broadwell CPU, and Intel CEO Brian Krzanich said, " will be shipping by the end of this year." However, shipment was delayed further until Q4 2014. In December 2012, Samsung Electronics taped out a 14 nm chip. In September 2011, Hynix announced the development of 15 nm NAND cells. In December 2009, National Nano Device Laboratories, owned by the Taiwanese government, produced a 16 nm SRAM chip. In December 2007, Toshiba demonstrated a prototype memory unit that used 15-nanometre thin lines. It has been suggested that for the 16 nm node, a logic transistor would have a gate length of about 5 nm. In 2005, Toshiba demonstrated a 15 nm FinFET process, with a 15 nm gate length and 10 nm fin width, using a sidewall spacer process. In 2002, an international team of researchers at UC Berkeley, including Shibly Ahmed (Bangladeshi), Scott Bell, Cyrus Tabery (Iranian), Jeffrey Bokor, David Kyser, Chenming Hu ( Taiwan Semiconductor Manufacturing Company), and Tsu-Jae King Liu, demonstrated FinFET devices down to 10 nm gate length. They later developed a 15 nm FinFET process in 2001. In 1998, the team successfully fabricated devices down to a 17 nm process. In the late 1990s, Hisamoto's Japanese team from Hitachi Central Research Laboratory began collaborating with an international team of researchers on further developing FinFET technology, including TSMC's Chenming Hu and various UC Berkeley researchers. On May 17, 2011, Intel announced a roadmap for 2014 that included 14 nm transistors for their Xeon, Core, and Atom product lines. Intel has since decided to postpone opening this facility and instead upgrade its existing facilities to support 14-nm chips. Intel billed the new facility as "the most advanced, high-volume manufacturing facility in the world," and said it would come on line in 2013. The new fabrication plant was to be named Fab 42, and construction was meant to start in the middle of 2011. On February 18, 2011, Intel announced that it would construct a new $5 billion semiconductor fabrication plant in Arizona, designed to manufacture chips using the 14 nm manufacturing processes and leading-edge 300 mm wafers. On January 17, 2011, IBM announced that they were teaming up with ARM to develop 14 nm chip processing technology. Mentor Graphics reported taping out 16 nm test chips in 2010. Samsung and Synopsys have also begun implementing double patterning in 22 nm and 16 nm design flows. Tela Innovations and Sequoia Design Systems developed a methodology allowing double exposure for the 16/14 nm node circa 2010. Thus about 90 Si atoms would span the channel length, leading to substantial leakage. For comparison, the atomic radius of an unconstrained silicon is 0.11 nm. The damage sensitivity is expected to get worse as the low-k materials become more porous. The extent of damage is typically 20 nm thick, but can also go up to about 100 nm. Hardmask materials and multiple patterning are required.Ī more significant limitation comes from plasma damage to low-k materials. In addition, the chemical effects of ionizing radiation also limit reliable resolution to about 30 nm, which is also achievable using current state-of-the-art immersion lithography. The following year, Intel began shipping 14 nm scale devices to consumers.ġ4 nm resolution is difficult to achieve in a polymeric resist, even with electron beam lithography. The same year, SK Hynix began mass-production of 16 nm NAND flash, and TSMC began 16 nm FinFET production. Samsung Electronics taped out a 14 nm chip in 2014, before manufacturing 10 nm class NAND flash chips in 2013. All 14 nm nodes use FinFET (fin field-effect transistor) technology, a type of multi-gate MOSFET technology that is a non-planar evolution of planar silicon CMOS technology. Until about 2011, the node following 22 nm was expected to be 16 nm. The 14 nm was so named by the International Technology Roadmap for Semiconductors (ITRS). The 14 nm process refers to the MOSFET technology node that is the successor to the 22 nm (or 20 nm) node.
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